Initial stages of GaN/GaAs(100) growth by metalorganic chemical vapor deposition
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چکیده
منابع مشابه
Initial stages of GaN/GaAs(100) growth by metalorganic chemical vapor deposition
A study of GaN buffers grown by metalorganic chemical vapor deposition on ~001! GaAs substrates was performed. Nucleation images obtained by atomic force microscopy ~AFM! were employed to investigate the growth temperature, growth time, and growth rate dependence of the nucleation mechanisms. The growth mode corresponds to two-dimensional ~2D! island nucleation at low temperatures, while three-...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1996
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.362994